t4 - lds -0 321 -1, rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 1 of 5 1n70 39 cc u1 available on commercial versions s ilicon d ual s chottky p ower r ectifier 35 a mp , 1 50 v olt qualified per mil -prf- 19500/73 7 qualified levels: jan, jantx, and jantxv description th is dual schottky r ectifier device is military qualified up to a jan txv level for high - reliability applications. they are hermetically sealed in a common cathode configuration offering very fast switching characteristics compared to fast or ultrafast recti fiers. u1 (smd - 1) package also available in : to - 257 aa package ( leaded ) 1n70 4 7cct3 to - 254aa package (leaded) 1n7039cct1 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered equivalent of 1n7039 ? hermeti cally isolated u1 package ? internal metallurgi cal bonds ? temperature independent switching behavior ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/73 7 ? rohs compliant versions available (commercial grade only) applications / benefits ? schottky barrier rectifier diodes (dual) for military, space and other high reliability appl ications ? switching power supplies or other applications requiring extremely fast switching and esse ntially no switching losses. ? low f orward v oltage d rop ? high forward surge capability ? inherently radiation hard >100 krads as described in micronote 050 m axim um ratings @ t a = +25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, irela nd tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage tem p erature t j and t stg - 65 to + 150 o c thermal resistance junction - to - case (2.3 o c/w maximum) r ? jc 1.67 o c /w working peak reverse voltage v rw m 150 v junction capacitance c j 350 pf average dc output current @ t c = + 100 o c i o 35 a non - repetitive sinusoidal surge current @ t p = 8.3 ms , t c = +25 o c i fsm 200 a downloaded from: http:///
t4 - lds -0 321 -1, rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 2 of 5 1n70 39 cc u1 mechanical and packaging ? ca se: ceramic and g old over n ickel p lated s teel ? terminals: gold over n ickel p lated t ungsten/ c opper . ? marking: part number, date code, and polarity symbol ? polarity: see schematic on last page ? w eight: approximately 2.25 grams ? see p ackage d imensions on last page. part nomenclature jan 1n7039 cc u1 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number rohs co mpliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant surface mount package type p olarity (common cathode) symbols & definitions symbol definition c j junction capacitance: the junction capacitance in pf at a specified frequency (typically 1mhz) and specified voltage. i f forward current: the current flowing from the p - type region to the n - type region. i r reverse current: the dc current flowing from the external circuit into the cathode terminal at the specified voltage v r . t j junction temperature: the temperature of a semiconductor junction. v f forward voltage: a positive dc anode - cathode voltage the device will exhibit at a specified forward current. v r reverse voltage: a positive dc cathode - anode voltage below the breakdown region. downloaded from: http:///
t4 - lds -0 321 -1, rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 3 of 5 1n70 39 cc u1 electrical characteristics @ t a = + 25 o c unless otherwise noted parameters / test conditions symbol min. max. unit off charactertics forward voltage* i f = 1 5 a i f = 35 a i f = 1 5 a, t c = - 55 c i f = 35 a, t c = +1 25 c v f 1.13 1. 60 1. 35 1. 20 v reverse current v r = 1 50 v v r = 1 50 v, t c = +125 c i r 0.5 15 ma * pulse test: pulse width 300 sec, d uty cycle 2% . downloaded from: http:///
t4 - lds -0 321 -1, rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 4 of 5 1n70 39 cc u1 graphs t c (c) (case) figure 1 temperature - current derating (for each leg) t1, rectangular pulse duration ( s ec) figure 2 thermal impedance (for each leg) thermal impedance Cz ? jx ( o c/w) switch mode op eration maximum io rating (a) downloaded from: http:///
t4 - lds -0 321 -1, rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 5 of 5 1n70 39 cc u1 package dimensions no t es: 1. dimensions are in inches. 2. millimeters are given for information onl y. 3. in accordance w ith asme y14.5m, diameters are equivalent to x sy mbolog y. schematic term 1 = cathode term 2 = anode term 3 = anode sy mbol dimensions inches millimeters min max min max bl 0 .620 0 .630 15.75 16.00 bw 0 .445 0 .455 11.30 11.56 ch 0 .129 0 .1 42 3.28 3.61 lh 0 .010 0 .020 0.26 0.51 lw1 0 .370 0 .380 9.40 9.65 lw2 0 .135 0 .145 3.43 3.68 ll1 0 .410 0 .420 10.41 10.67 ll2 0 .152 0 .162 3.86 4.12 ls1 0 .200 0 .220 5.08 5.59 ls2 0 .100 0 .110 2.54 2.79 q1 0 .03 0 - 0.76 q2 0. 035 - 0.89 downloaded from: http:///
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